Cryoelectronics and Systems

We currently have testing capabilities to take samples to a temperature of ~11K and are in the process of acquiring two systems that will allow us to go below a temperature of 4K. We use temperature as a “big knob” in experiments on materials such as CNT, ZnO and GaN to help us understand charge transport through these materials. In addition to looking at how these (and other) materials perform electrically and thermally over a wide range of temperatures, we are also studying how to build better packaging and integration for use in advanced electronic systems at these low temperatures and even lower.

Our ARS cryogenic probe station (made possible by funding provided through the Auburn University Intramural Grants Program, AU-IGP, and the Auburn University College of Engineering) has capabilities including: 4 micromanipulated DC probes, 2 micromanipulated 67GHz GSG probes, 50 pin DC/LF feed through, 4″ sample stage, cryogen-free/closed-cycle He refrigerator, <~11K sample temperature, optical window + microscope + large display, single-button vacuum pump-down. Pump-down in < 1hr, cool-down in < 2hrs.

We are acquiring a Janis LHe Dewar (8CNDT with SVT probe) and performing modifications to our ARS Helitran (flow cryostat) to provide additional temperature-dependent transport and optical microscopy capabilities.

Dr. Michael C. Hamilton

Dr. Hamilton obtained his B.S.E.E. from Auburn University in 2000 and M.S.E.E. and Ph.D. from The University of Michigan in 2003 and 2005, respectively. His graduate work focused on advanced and alternative microelectronic devices, namely organic semiconductor-based transistors and sensors. From 2006 to 2010, he was at MIT-Lincoln Laboratory (Lexington, MA). While at Lincoln Laboratory, Dr. Hamilton led instrument-level and system-level projects on the next generation of geostationary imaging for weather satellite systems, testing and modeling of highly-scaled and environmentally-optimized CMOS devices subjected to extreme environmental conditions, and modeling, design, fabrication and test of advanced technologies for high-frequency RF sample-hold and analog-digital conversion circuits based on Fully-Depleted Silicon-On-Insulator (FD-SOI) transistors and CCD structures. Dr. Hamilton joined the Electrical and Computer Engineering Department of Auburn University in 2010, and has been an Associate Professor since 2015. He is the Director of the Alabama Micro/Nano Science and Technology Center (AMNSTC). His current interests and areas of work include: physics and applications of organic, molecular and bio-inspired electronic and optoelectronic devices, nanotechnology for electronic and photonic devices, active and passive thin-film devices, cryogenic (>mK) and radiation effects in semiconductor devices, and advanced packaging and integration technologies for extreme environments (including superconducting technologies). He is also currently serving on the IEEE MTT-S Education Committee, he is the MTT-S webinar producer/moderator and he is on the MTT-18 Microwave Superconductivity Technical Committee.

PhD Dissertation

Google Scholar Page

Research Gate

LinkedIn

AMNSTC

IEEE MTT-S (Webinar Archive and MTT-18)

Photovoltaics

In collaboration with Dr. Minseo Park (Department of Physics, Auburn University), we are investigating multiple fabrication methods and configurations of advanced / flexible photovoltaics. We are developing and characterizing our unique structures (including alternative configurations, hybrid organic/inorganic, and sensitized with various nanostructures), with the hopes of enhanced performance (i.e., efficiency) and ease of fabrication (i.e., roll-to-roll).

Image courtesy of Dr. Minseo Park.

TSV

With the help of Charles Ellis in the AMNSTC, we have developed a reliable through-Si via (TSV) process that we are using in our in-house 2.5D / 3D packaging and integration. This technology uses PEALD deposited Ru seed layers and electroplated Cu TSVs.

These structures exhibit excellent filling, high aspect ratio and excellent uniformity. Current efforts are in characterizing the RF / signal integrity performance of these structures, as well as exploring integration density, reliability, forming superconducting versions, etc.