Cryoelectronics and Systems

We currently have testing capabilities to take samples to a temperature of ~11K and are in the process of acquiring two systems that will allow us to go below a temperature of 4K. We use temperature as a “big knob” in experiments on materials such as CNT, ZnO and GaN to help us understand charge transport through these materials. In addition to looking at how these (and other) materials perform electrically and thermally over a wide range of temperatures, we are also studying how to build better packaging and integration for use in advanced electronic systems at these low temperatures and even lower.

Our ARS cryogenic probe station (made possible by funding provided through the Auburn University Intramural Grants Program, AU-IGP, and the Auburn University College of Engineering) has capabilities including: 4 micromanipulated DC probes, 2 micromanipulated 67GHz GSG probes, 50 pin DC/LF feed through, 4″ sample stage, cryogen-free/closed-cycle He refrigerator, <~11K sample temperature, optical window + microscope + large display, single-button vacuum pump-down. Pump-down in < 1hr, cool-down in < 2hrs.

We are acquiring a Janis LHe Dewar (8CNDT with SVT probe) and performing modifications to our ARS Helitran (flow cryostat) to provide additional temperature-dependent transport and optical microscopy capabilities.